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www.irf.com 1 11/11/09 fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.54mh, r g = 25 ? , i as = 15a. irf6711spbf IRF6711STRPBF directfet power mosfet

0 5 10 15 20 25 30 35 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 15a 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 5 10 15 t y p i c a l r d s ( o n ) ( m ? ) i d = 15a t j = 25c t j = 125c sq sx st mq mx mt mp description the IRF6711STRPBF combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve improved performance in a package that has the footprint of a micro-8 and only 0.7 mm profile. the directfet package is compat ible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection solderin g tech- niques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allo ws dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6711STRPBF has low gate resistance and low charge along with ultra low package inductance providing significant reductio n in switching losses. the reduced losses make this product ideal for high efficiency dc-dc converters that power the latest generat ion of processors operating at higher frequencies. the IRF6711STRPBF has been optimized for the control fet socket of synchronous buc k operating from 12 volt bus converters. rohs compliant and halogen free low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for cpu core dc-dc converters optimized for control fet application compatible with existing surface mount techniques 100% rg tested directfet isometric absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a v a 15 max. 15 84 150 20 25 19 62 v dss v gs r ds(on) r ds(on) 25v max 20v max 3.0m ? @ 10v 5.2m ? @ 4.5v q g tot q gd q gs2 q rr q oss v gs(th) 13nc 4.4nc 1.8nc 21nc 9.5nc 1.8v
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 19 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 3.0 3.8 ??? 5.2 6.5 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -6.4 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 78 ??? ??? s q g total gate charge ??? 13 20 q gs1 pre-vth gate-to-source charge ??? 3.1 ??? q gs2 post-vth gate-to-source charge ??? 1.8 ??? q gd gate-to-drain charge ??? 4.4 ??? q godr gate charge overdrive ??? 3.7 ??? see fig.2, 15 q sw switch charge (q gs2 + q gd ) ??? 6.2 ??? q oss output charge ??? 9.5 ??? nc r g gate resistance ??? 0.4 ??? ? t d(on) turn-on delay time ??? 7.7 ??? t r rise time ??? 13 ??? t d(off) turn-off delay time ??? 7.1 ??? t f fall time ??? 5.4 ??? c iss input capacitance ??? 1810 ??? c oss output capacitance ??? 470 ??? pf c rss reverse transfer capacitance ??? 210 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 17 26 ns q rr reverse recovery charge ??? 21 32 nc a ns ??? ??? ??? ??? 52 150 m ? v ds = v gs , i d = 25a a nc di/dt = 370a/s t j = 25c, i s = 15a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 15a t j = 25c, i f = 15a v gs = 4.5v i d = 15a v gs = 0v v ds = 13v i d = 15a v dd = 13v, v gs = 4.5v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 19a v gs = 20v v gs = -20v v ds = 20v, v gs = 0v v ds = 13v v ds = 20v, v gs = 0v, t j = 125c mosfet symbol r g = 1.5 ? v ds = 13v, i d = 15a conditions see fig. 17 ? = 1.0mhz v ds = 16v, v gs = 0v
www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink.
r is measured at t j of approximately 90c. surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 5.276 0.00315 30.637 0.75858 22.09 36.9 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a absolute maximum ratin g s parameter units p d @t a = 25c power dissipation p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 58 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.0 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c w c 0.017 270 -40 to + 150 max. 42 2.2 1.4
4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 19a v gs = 10v v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 150 i d , drain current (a) 0 5 10 15 20 25 30 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v
www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 90 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.91a 1.16a bottom 15a 0.01 0.10 1.00 10.00 100.00 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c t j = 150c single pulse 100sec 1msec 10msec dc
6 www.irf.com fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1k vcc dut 0 l
1 0.1 %
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www.irf.com 7 fig 18. for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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! " note: for the most current drawing please refer to ir website at http://www .irf.com/package gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free"

!"# $%&' '()*&+( )) & *' + code a b c d e f g h k l m r p imperial min 4.75 3.70 2.75 0.35 0.48 0.78 0.88 0.78 0.93 2.00 0.616 0.020 0.08 max 4.85 3.95 2.85 0.45 0.52 0.82 0.92 0.82 0.97 2.10 0.676 0.080 0.17 min 0.187 0.146 0.108 0.014 0.019 0.031 0.035 0.031 0.037 0.079 0.0235 0.0008 0.003 metric dimensions max 0.191 0.156 0.112 0.018 0.020 0.032 0.036 0.032 0.038 0.083 0.0274 0.0031 0.007
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2009

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note: for the most current drawing please refer to ir website at http://www .irf.com/package reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRF6711STRPBF). for 1000 parts on 7" reel, order irf6711str1pbf b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial a d loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 d h g

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